IRS21864STRPBF is a high-voltage, high-speed driver IC designed to drive both low-side and high-side N-channel MOSFETs and IGBTs in half-bridge configurations. Here’s a general description:
- Type: High-Voltage MOSFET and IGBT Driver IC
- Gate Drive Voltage: Capable of operating with logic inputs from 3.3V to 20V.
- Driver Configuration: Half-bridge gate driver for driving high-side and low-side transistors.
- Operating Voltage: Can handle high-side voltages up to 600V, making it suitable for high-voltage applications.
- Dead-Time Control: Built-in dead-time prevents shoot-through between high- and low-side MOSFETs.
- Propagation Delay: Fast propagation delays to enable high-speed switching operations.
- Package: Offered in an 8-lead SOIC package (Surface-mount design).
- Applications: Ideal for motor control, power supplies, inverters, and other high-voltage switching circuits.
- Features:
- Under-voltage lockout
- Independent control for high- and low-side MOSFETs
- Bootstrap supply for the high-side driver
This device is well-suited for high-speed, high-power switching applications, ensuring efficient control of MOSFETs or IGBTs in half-bridge configurations.