2N7002LT1G

The 2N7002LT1G is a small signal N-channel MOSFET designed for general-purpose switching and amplification applications in electronic circuits.

Key Features:

• Type: N-channel MOSFET
• Drain-Source Voltage (Vds): 60V, allowing the MOSFET to handle moderate voltage levels.
• Drain Current (Id): 300 mA, providing suitable current handling for low-power applications.
• Rds(on): Low on-resistance, ensuring minimal power loss during switching operations, typically around 1.2Ω at Vgs = 10V.
• Gate Threshold Voltage (Vgs(th)): Typically 1-3V, making it easy to control with standard logic level signals.
• Package: SOT-23, a compact, surface-mount package ideal for space-constrained designs.
• Low Gate Charge: Ensures fast switching speeds, making it suitable for high-speed applications.
• Wide Operating Temperature Range: -55°C to +150°C, ensuring reliability under various environmental conditions.

Typical Applications:

• Switching Circuits: Commonly used for switching small loads in consumer electronics and power management circuits.
• Signal Amplification: Ideal for amplifying small signals in low-power circuits.
• Load Switching: Used in battery-powered devices for load switching and power management.
• Level Shifting: Used for shifting voltage levels in digital circuits.
• DC-DC Converters: Employed in low-power DC-DC converter designs due to its fast switching and low Rds(on).

The 2N7002LT1G is widely used for its versatility, low power loss, and compact size, making it an excellent choice for switching and amplification in various electronic applications.