Manufacturer |
Diodes Incorporated |
RoHS |
Details |
Technology |
Si |
Mounting Style |
SMD/SMT |
Package / Case |
DFN-2020-6 |
Transistor Polarity |
P-Channel |
Number of Channels |
2 Channel |
Vds – Drain-Source Breakdown Voltage |
12 V |
Id – Continuous Drain Current |
3.9 A |
Rds On – Drain-Source Resistance |
215 mOhms |
Vgs – Gate-Source Voltage |
– 8 V, + 8 V |
Vgs th – Gate-Source Threshold Voltage |
1 V |
Qg – Gate Charge |
13 nC |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd – Power Dissipation |
1.89 W |
Channel Mode |
Enhancement |
Brand |
Diodes Incorporated |
Configuration |
Dual |
Product Type |
MOSFET |
Factory Pack Quantity |
3000 |
Subcategory |
MOSFETs |
Unit Weight |
0.000238 oz |