IR2101STRPBF

The IPW65R110CFD is a high-performance N-channel MOSFET designed for efficient power switching applications, particularly in high-voltage environments. It offers a combination of low on-resistance, high current capability, and fast switching speeds. Key features include:

1. Type:
   • N-channel MOSFET optimized for high-voltage power switching.
2. Voltage Rating:
   • 650V maximum drain-to-source voltage (V_DS), making it suitable for high-voltage applications.
3. Current Rating:
   • Capable of handling up to 65A continuous drain current, providing robust performance in high-current applications.
4. On-Resistance:
   • Low R_DS(on) of 110 mΩ, reducing conduction losses and improving power efficiency.
5. Switching Speed:
   • Fast switching capabilities, suitable for high-frequency applications.
6. Gate Charge:
   • Low total gate charge of 160 nC, which minimizes the power needed to drive the gate and enhances switching efficiency.
7. Package:
   • Housed in a D2PAK package, designed for effective thermal management and high power dissipation.
8. Applications:
   • Ideal for use in power supplies, DC-DC converters, motor drives, and other high-voltage power management applications.

The IPW65R110CFD combines high voltage handling, low on-resistance, and fast switching performance, making it a versatile choice for demanding power management and switching tasks.