Manufacturer |
Infineon |
RoHS |
Details |
Technology |
Si |
Mounting Style |
SMD/SMT |
Package / Case |
SOT-23-3 |
Transistor Polarity |
N-Channel |
Number of Channels |
1 Channel |
Vds – Drain-Source Breakdown Voltage |
20 V |
Id – Continuous Drain Current |
6.3 A |
Rds On – Drain-Source Resistance |
21 mOhms |
Vgs – Gate-Source Voltage |
– 12 V, + 12 V |
Vgs th – Gate-Source Threshold Voltage |
1.8 V |
Qg – Gate Charge |
8.9 nC |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd – Power Dissipation |
1.3 W |
Channel Mode |
Enhancement |
Tradename |
HEXFET |
Brand |
Infineon / IR |
Configuration |
Single |
Product Type |
MOSFET |
Series |
N-Channel |
Factory Pack Quantity |
6000 |
Subcategory |
MOSFETs |
Transistor Type |
1 N-Channel |
Part # Aliases |
IRLML6244TRPBF SP001558344 |
Unit Weight |
0.000282 oz |
Length |
2.9 mm |
Width |
1.3 mm |
Height |
1.1 mm |