Manufacturer |
Vishay |
Product Category |
MOSFET |
RoHS |
Details |
Technology |
Si |
Mounting Style |
SMD/SMT |
Package / Case |
SOT-23-3 |
Transistor Polarity |
P-Channel |
Number of Channels |
1 Channel |
Vds – Drain-Source Breakdown Voltage |
20 V |
Id – Continuous Drain Current |
4.7 A |
Rds On – Drain-Source Resistance |
39 mOhms |
Vgs – Gate-Source Voltage |
– 8 V, + 8 V |
Vgs th – Gate-Source Threshold Voltage |
400 mV |
Qg – Gate Charge |
19 nC |
Minimum Operating Temperature |
– 55 C |
Maximum Operating Temperature |
+ 150 C |
Pd – Power Dissipation |
1.25 W |
Channel Mode |
Enhancement |
Tradename |
TrenchFET |
Brand |
Vishay Semiconductors |
Configuration |
Single |
Fall Time |
48 ns |
Product Type |
MOSFET |
Rise Time |
43 ns |
Series |
SI2 |
Factory Pack Quantity |
3000 |
Subcategory |
MOSFETs |
Transistor Type |
1 P-Channel |
Typical Turn-Off Delay Time |
71 ns |
Typical Turn-On Delay Time |
25 ns |
Part # Aliases |
SI2323DS-T1-BE3 SI2323DS-E3 |
Unit Weight |
0.000282 oz |
Length |
2.9 mm |
Width |
1.6 mm |
Height |
1.45 mm |