SI2369DS-T1-GE3

Manufacturer Part Number: SI2369DS-T1-GE3	Manufacturer / Brand: Vishay
Part of Description: MOSFET -30V Vds 20V Vgs SOT-23	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: datasheet-150.pdf

Product parameters

Manufacturer	Vishay
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	30 V
Id – Continuous Drain Current	7.6 A
Rds On – Drain-Source Resistance	29 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	2.5 V
Qg – Gate Charge	11.4 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 150 C
Pd – Power Dissipation	2.5 W
Channel Mode	Enhancement
Tradename	TrenchFET
Brand	Vishay Semiconductors
Configuration	Single
Fall Time	6 ns
Product Type	MOSFET
Rise Time	4 ns
Series	SI2
Factory Pack Quantity	3000
Subcategory	MOSFETs
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	13 ns
Part # Aliases	SI2369DS-T1-BE3
Unit Weight	0.000282 oz
Length	2.9 mm
Width	1.6 mm
Height	1.45 mm