Manufacturer: |
STMicroelectronics |
Product Category: |
IGBT Transistors |
RoHS: |
Details |
Technology: |
Si |
Package / Case: |
TO-247-3 |
Mounting Style: |
Through Hole |
Configuration: |
Single |
Collector- Emitter Voltage VCEO Max: |
650 V |
Collector-Emitter Saturation Voltage: |
1.8 V |
Maximum Gate Emitter Voltage: |
– 20 V, 20 V |
Continuous Collector Current at 25 C: |
80 A |
Pd – Power Dissipation: |
283 W |
Minimum Operating Temperature: |
– 55 C |
Maximum Operating Temperature: |
+ 175 C |
Series: |
STGW40H65DFB |
Packaging: |
Tube |
Brand: |
STMicroelectronics |
Continuous Collector Current Ic Max: |
40 A |
Gate-Emitter Leakage Current: |
250 nA |
Product Type: |
IGBT Transistors |
Factory Pack Quantity: Factory Pack Quantity: |
600 |
Subcategory: |
IGBTs |
Unit Weight: |
1.340411 oz |